2N6487

Transistors Bipolar (BJT) 15A 60V Bipolar

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SeekIC No. : 00213698 Detail

2N6487: Transistors Bipolar (BJT) 15A 60V Bipolar

floor Price/Ceiling Price

Part Number:
2N6487
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 15 A
DC Collector/Base Gain hfe Min : 20 at 5 A at 4 V Configuration : Single
Maximum Operating Frequency : 5 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 15 A
DC Collector/Base Gain hfe Min : 20 at 5 A at 4 V
Maximum Operating Frequency : 5 MHz (Min)


Features:

· STMicroelectronics PREFERRED SALESTYPES
· COMPLEMENTARY PNP - NPN DEVICES






Specifications

Symbol
Parameter
Value
Unit
NPN
2N6487
2N6488
PNP
2N6490
VCBO
collector-base voltage (IE = 0)
70
90
V
VCEX
Collector-Emitter Voltage (VBE=-1.5V,RBE=100)
70
90
V
VCEO
emitter-base voltage(IB = 0)
60
80
V
VEBO
Emitter-Base Voltage (IC = 0)
5
A
IC
Collector Current
15
A
IB
Base Current
5
A
Ptot
Total Dissipation at TC 25 °C
75
W
Tj
Storage Temperature
-65 to 150
°C
Tstg
Max. Operating Junction Temperature
150
°C


For PNP types voltage and current values are negative.






Description

The 2N6487 and 2N6488 are silicon epitaxial-base NPN transistors in Jedec TO-220 plastic package.

They are inteded for use in power linear and low frequency switching applications.

The 2N6487 complementary type is 2N6490.






Parameters:

Technical/Catalog Information2N6487
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)15A
Power - Max75W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 5A, 4V
Vce Saturation (Max) @ Ib, Ic1.3V @ 500mA, 5A
Frequency - Transition5MHz
Current - Collector Cutoff (Max)1mA
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names 2N6487
2N6487



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