2N6491

Configuration :
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220AB
Maximum DC Collector Current : 15 A
DC Collector/Base Gain hfe Min : 20
Collector- Emitter Voltage VCEO Max : 80 V
Packaging : Box
Maximum Operating Frequency : 5 MHz


Application

·Power amplifier and medium speed switching applications




Specifications

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT
VCBO	Collector-base voltage	2N6489	Open emitter	-50	V
		2N6490		-70
		2N6491		-90
VCEO	Collector-emitter voltage	2N6489	Open base	-40	V
		2N6490		-60
		2N6491		-80
VEBO	Emitter-base voltage		Open collector	-5	V
IC	Collector current			-15	A
IB	Base current			-5	A
PT	Total power dissipation		TC=25	75	W
Tj	Junction temperature			150
Tstg	Storage temperature			-65~150

Description

·2N6491 With TO-220 package
·Excellent safe operating area
·Complement to type 2N6486 2N6487 2N6488 respectively




Parameters:

Technical/Catalog Information	2N6491
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	15A
Power - Max	75W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 5A, 4V
Vce Saturation (Max) @ Ib, Ic	1.3V @ 500mA, 5A
Frequency - Transition	5MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N6491 2N6491 2N6491OS ND 2N6491OSND 2N6491OS