2N6517BU

Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

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SeekIC No. : 00205675 Detail

2N6517BU: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

floor Price/Ceiling Price

US $ .02~.04 / Piece | Get Latest Price
Part Number:
2N6517BU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.04
  • $.04
  • $.03
  • $.02
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 350 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 30 Configuration : Single
Maximum Operating Frequency : 200 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Maximum Operating Frequency : 200 MHz
Package / Case : TO-92
Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 30
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 350 V


Parameters:

Technical/Catalog Information2N6517BU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)350V
Current - Collector (Ic) (Max)500mA
Power - Max625mW
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 30mA, 10V
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Frequency - Transition200MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2N6517BU
2N6517BU



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