MOSFET N-CHANNEL 60V 200mA
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.2 A | ||
| Resistance Drain-Source RDS (on) : | 1.2 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-92 | Packaging : | Bulk |

| Symbol | Value | Unit | |
| Drain-Source Voltage | VDSS | 60 | V |
| Drain-Gate Voltage | VDGS | 60 | V |
| Gate-Source Voltage (pulsed) | VGS | ± 20 | V |
| Drain Current (continuous) | ID | 300 | mA |
| Power Dissipation at Tamb = 25 °C | Ptot | 8301) | mW |
| Junction Temperature |
TJ | 150 | °C |
| Storage Temperature Range | TS | 65 to +150 | °C |
| Technical/Catalog Information | 2N7000 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 200mA |
| Rds On (Max) @ Id, Vgs | 5 Ohm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 50pF @ 25V |
| Power - Max | 400mW |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | TO-92 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2N7000 2N7000 2N7000FS ND 2N7000FSND 2N7000FS |