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2N7000,126

MOSFET N-CH 60V 300MA TO-92

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SeekIC No. : 003432715 Detail

2N7000,126: MOSFET N-CH 60V 300MA TO-92

2N7000,126 Data Sheet

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Part Number:
2N7000,126
Mfg:
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Product Details

Quick Details

Series: TrenchMOS™ Manufacturer: NXP Semiconductors
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Typical Resistor Ratio : 4.5 Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 300mA
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) @ Vgs: -
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 40pF @ 10V
Power - Max: 830mW Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 60V
Gate Charge (Qg) @ Vgs: -
Current - Continuous Drain (Id) @ 25° C: 300mA
Mounting Type: Through Hole
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Power - Max: 830mW
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds: 40pF @ 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92-3
Packaging: Tape & Box (TB)


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