2N7330D

2N7330D is a kind of radiation hardened P-Channel power MOSFET. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron exposures.

What comes next is the absolute maximum ratings of 2N7330D. The VDS (drain-source voltage) is -200 V. The VDGR (drain-gate voltage (RGS=20 k)) is -200 V. The ID (continuous current) is 26 A at TC=25 and 17 A at TC=100. The IDM (pulsed drain current) is 78 A. The VGS (gate-source voltage) is ±20 V. The PT (maximum power dissipation) is 300 W at TC=25 and 120 mW at TC=100. The IS (continuous source current (body diode)) is 26 A. The ILM (inductive current, clamped, L=100H) is 78 A. The ISM (pulsed source current (body diode)) is 78 A.
The operating and storage temperature range is from -55 to +150. The TL (lead temperature) is 300 when the distance > 0.063 in. (1.6 mm) from case, 10s max.

The following is about the pre-radiation electrical specifications of 2N7330D (TC=25 unless otherwise specified). The minimum BVDSS (drain-sourve breakdown voltage) is -200 V at VGS=0, ID=1 mA. The minimum VGS(th) (gate-threshold voltage) is -2.0 V and the maximum is -4.0 V at VDS=VGS, ID=1 mA. The maximum IGSSF (gate-body leakage forward) is 100 nA at VGS=-20 V. The maximum IGSSR (gate-body leakage reverse) is 100 nA at VGS=+20 V. The maximum IAR (rated avalanche current) is 78 A at Time=20s. The maximum VDS(on) (drain-source on-state voltage) is -5.46 V at VGS=-10 V, ID=26 A.