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Part Number: 2N7373

 

 

 

 

Description: These power transistors are produced by PPC's MULTIPLE DIFFUSED PLANAR process. This technology produc...


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2N7373 General Description


These power transistors are produced by PPC's MULTIPLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. These devices have excellent unclamped and clamped reverse energy ratings with the base to emitter reversed biased.


Ultrasonically bonded wire leads and gold eutectic die bonding are utilized to permit operating temperature to 200. The hermetically sealed package insures maximum reliability and long life. The isolated low profile package allows for easy PC board fit.

2N7373 Maximum Ratings

SYMBOL CHARACTERISTIC 2N7372 2N7373 UNITS
VCBO
VCEO
VEBO
Collector-Base Voltage
Collector-Emitter
VoltageEmitter-Base Voltage
- 100
- 80
- 5.5
100
80
5.5
V
V
V
IC
IC
IB
Continuous Collector Current
Peak Collector Current
Continuous Base Current
5
10
2
5
10
2
A
A
A
TSTG
TJ
Storage Temperature
Operating Junction Temperature
Lead Temperature 1/16" from cast for 10 sec.
Unclamped Inductive Load Energy
-65 to 200
-65 to 200
300
15



mj
PT Continuous Device
Dissipation TC = 25
TC = 100
58
33
58
33
W
W
JC Thermal Resistance Junction to Case 3 3 /W

2N7373 Features

Planar Process for Reliability
Fast Switching
High-Frequency Power Transistors
For Complementary Use with Each Other
15 mj Reverse Energy Rating with IC = 10MA and 4 V Reverse Bias
Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Package
Leads can be Formed
All Terminals Isolated from the Case

2N7373 Typical Application

Power Supply
Inverters and Converters
General Purpose Amplifiers

2N7373 datasheet

2N7373
PDF/DataSheet Download

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