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2PB709A

Features: • Low current (max. 100 mA)• Low voltage (max. 45 V).Application• General purpose switching and amplification.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −45 V VCEO collector-em...

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2PB709A: Features: • Low current (max. 100 mA)• Low voltage (max. 45 V).Application• General purpose switching and amplification.Specifications SYMBOL PARAMETER CONDITIONS MIN. MA...

2PB709A Data Sheet

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Part Number:
2PB709A
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low current (max. 100 mA)
• Low voltage (max. 45 V).


Application

• General purpose switching and amplification.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − −45 V
VCEO collector-emitter voltage open base − −45 V
VEBO emitter-base voltage open collector − −6 V
IC collector current (DC)   − -100 mA
ICM peak collector current   − −200 mA
IBM peak base current   − −100 mA
Ptot total power dissipation Tamb 25 °C; note 1 − 250 mW
Tstg storage temperature   −65 +150 °C
Tj junction temperature   − 150 °C
Tamb operating ambient temperature   −65 +150 °C



Description

PNP transistor in an SC-59 plastic package.
NPN complement: 2PB601A.


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