2PB710ARL

      The 2PB710ARL/2PB710ASL (50 V, 500 mA NPN general-purpose transistors) is used for PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, which is general-purpose transistors, AEC-Q101 qualified, small SMD plastic package, two current gain selections and applicated as general-purpose switching and amplification.
      Some parameters of the 2PB710ARL/2PB710ASL are got at Ta(=25°C), V_CBO(Collector basevoltage,Open emitter)=-60V(max), V_CEO(Collector-emitter voltage, Open base)=-50V(max), V_EBO(Emitter-base voltage, open collector)=-5V(max), I_C(Collector Current(DC))=-500mA(max), I_BM(peak base current, single pulse; tp 1ms)=-200mA(max), I_CM(peak collector current single pulse tp 1ms)=-1A(max), P_tot(total power dissipation T_amb 25 °C, Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint)=250mW(max), T_J(Junction temperature)=150°C(max), T_stg(Junction and Storage temperature)=-65 to 150°C, T_amb(ambient temperature)=-55 to 150°C.
      Some about the electrical properties of the 2PB710ARL/2PB710ASL are also got at Ta(25°C unless otherwise noted), I_CBO(Collector cut-off current)(V_CB =-60V, IE = 0)/(V_CB =-60V, I_E =0A T_j= 150 °C)=-10nA(Max)/-5µA(Max), I_EBO(Emitter cut-off current, V_EB = -5V, I_C = 0)=-10nA(max), h_FE(DC Current Gain, V_CE = -10V, I_C =-500mA)/(h_FE group R, V_CE =-10V;IC =150mA)/(h_FE group S V_CE =-10V; I_C =-150mA)=40/120/170(min) and -/140/340(max), V_CEsat(collector-emitter saturation voltage, I_C =-300mA, I_B =-30mA, Pulse test: tp 300 µs; 0.02.)=-600mV(max), f_T(Transition frequency I_C=-50mA; V_CE=-10V; f = 100 MHz)(h_FE group R)/(h_FE group S)=120/140MHz(min), C_c(collector capacitance,V_CB =10V; I_E =ie =0A; f=1MHz)=15pF(max).
      Above information is all relevant information about 2PB710ARL/2PB710ASL, if we find any new information,we will summarize for you,you can find it in www.ChinaICMart.com or  www.seekic.com.