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2PD2150

Features: Low collector-emitter saturation voltage VCEsatHigh collector current capability: IC and ICMHigh collector current gain (hFE) at high ICHigh efficiency due to less heat generationSmaller required Printed-Circuit Board (PCB) area than for conventional transistorsApplicationDC-to-DC ...

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2PD2150: Features: Low collector-emitter saturation voltage VCEsatHigh collector current capability: IC and ICMHigh collector current gain (hFE) at high ICHigh efficiency due to less heat generationSma...

2PD2150 Data Sheet

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Part Number:
2PD2150
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Description



Features:

Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors


Application

DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 40 V
VCEO collector-emitter voltage open base − 20 V
VEBO emitter-base voltage open collector − 5 V
IC collector current (DC)   − 1 A
ICM peak collector current single pulse;tp 1ms − 3 A
           
Ptot total power dissipation Tamb 25 °C; note 1 − 500 mW
− 850 mW
− 1200 mW
Tj junction temperature   −65 +150 °C
Tamb ambient temperature   − 150 °C
Tstg storage temperature   −65 +150 °C



Description

NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package.
PNP complement: 2PB1424.


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