Features: · Adoption of FBET process.· AF amp, AF power amp.· High breakdown voltage : VCEO>80VPinoutSpecifications Absolute maximum ratings VCEO [V] 80 IC [A] 0.5 PC [W] 0.6 Electrical characteristics hFE min 100 hFE max 400 VCE [V] 5 IC [...
2SA1450: Features: · Adoption of FBET process.· AF amp, AF power amp.· High breakdown voltage : VCEO>80VPinoutSpecifications Absolute maximum ratings VCEO [V] 80 IC [A] 0.5 PC [W] ...
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| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 80 |
| IC [A] | 0.5 |
| PC [W] | 0.6 |
| Electrical characteristics | |
|---|---|
| hFE min | 100 |
| hFE max | 400 |
| VCE [V] | 5 |
| IC [mA] | 50 |
| fT typ [MHz] | 120 |
| VCE [V] | 10 |
| IC [mA] | 10 |
| VCE (sat) max [V] | 0.5 |
| IC [mA] | 400 |
| IB [mA] | 40 |
| Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Collector-base voltage |
VCBO |
()100 |
V | |
| Collector-emitter voltage |
VCEO |
()80 |
V | |
| Emitter-base voltage |
VEBO |
()5 |
V | |
| Collector current |
Ic |
()500 |
mA | |
| Collector Current (Pulse) |
ICP |
()800 |
mA | |
| Base Current |
IB |
()100 |
mA | |
| Collector Dissipation |
PC |
600 |
mW | |
| Junction temperature |
Tj |
150 |
°C | |
| Storage temperature |
Tstg |
-55 to +150 |
°C |