2SA1576F

      The 2SA1576F is designed as PNP silicon general purpose transistor.
      2SA1576F has two features.The first one is that it would be the complements for the 2SC4081F.Then the second one is it would be RoHS compliant.That are all the features.
      Some absolute maximumRatings of 2SA1576F at Ta = 25°C have been concluded into several points as follow.The first one is about its junction temperature which would be +150°C.The second one is about its storage temperature which would be from -55 to +150°C.The third one is about its collector to base voltage which would be -60 V.The fourth one is about its collector to emitter voltage which would be -50 V.The fifth one is about its emitter to base voltage which would be -6 V.The sixth one is about its collector current which would be -150 mA.The last one is about its total power dissipation which would be 225 mW.
      Also there are some other characteristics about 2SA1576F which with condition of Ta=25°C.The first one is about its collector-base breakdown voltage which would be -60min V with condition of Ic=-50uA.The second one is about its collector-emitter breakdown voltage which would be -50min V with condition of Ic=-1mA.The third one is about its emitter-base breakdown voltage which would be -6min V with condition of Ie=-50uA.The fourth one is about its collector-emitter breakdown voltage which would be -100max nA with condition of Vcb=-60V.The fifth one is about its emitter-base cutoff current which would also be -100max nA with condition of Veb=-6V.The sixth one is about its collector saturation voltage 1 which would be -500max mV with condition of Ic=-50mA and Ib=-5mA.The seventh one is about its DC current gain which would be from 120 to 560 with condition of Vce=-6V and Ic=-1mA.The eighth one is about its gain-bandwidth product which would be 140typ MHz with condition of Vce=-12V, Ie=-2mA and f=100MHz.The last one is about its output capacitance which would be 4.0typ and 5.0max pF with condition of Vcb=-12V, f=1MHz and Ie=0.