2SA1723

Series: -
Resistor - Base (R1) (Ohms): -
Current - Collector Cutoff (Max): -
Resistor - Emitter Base (R2) (Ohms): -
Transistor Type: PNP
Mounting Type: Through Hole
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Frequency - Transition: 1.5GHz
Power - Max: 1.2W
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126
Manufacturer: SANYO Semiconductor (U.S.A) Corporation
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 5V


Features:

· High fT (fT=1.5GHz typ).
· High current (IC=300mA).
· Adoption of FBET process.




Application

· Wideband amplifiers.
· High-frequency drivers.




Pinout






Specifications

Absolute maximum ratings
VCBO [V]	30
VCEO [V]	20
VEBO [V]	3
IC [mA]	300
PC [mW]	5000 Tc=25°C

Electrical characteristics
hFE min	15
hFE max	100
VCE [V]	5
IC [mA]	50
fT typ [GHz]	1.5
VCE [V]	5
IC [mA]	100
Cob typ [pF]	5.8
VCB [V]	10
VCE (sat) max [V]	1
IC [mA]	100
IB [mA]	10
Cre typ [pF]	5

Parameter	Symbol	Conditions	Ratings	Unit
Collector-base voltage	VCBO		-30	V
Collector-emitter voltage	VCEO		-20	V
Emitter-base voltage	VEBO		-3	V
Collector current	Ic		-300	mA
Collector Current (Pulse)	ICP		-600	mA
Collector Dissipation	PC	Tc=25°C	1.2 5	W
Junction temperature	Tj		150	°C
Storage temperature	Tstg		-55 to +150	°C