Features: · Adoption of FBET and MBIT processes.· High current capacitance.· Low collector-to-emitter saturation voltage.· High-speed switching.· Ultrasmall package facilitales miniaturization in end roducts.· High allowable power dissipation.Application· Relay drivers, lamp drivers, motor drivers...
2SA2016: Features: · Adoption of FBET and MBIT processes.· High current capacitance.· Low collector-to-emitter saturation voltage.· High-speed switching.· Ultrasmall package facilitales miniaturization in en...
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| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 50 |
| IC [A] | 7 |
| PC [W] | 3.5
Tc=25°C |
| Electrical characteristics | |
|---|---|
| hFE min | 200 |
| hFE max | 560 |
| VCE [V] | 2 |
| IC [A] | 0.5 |
| VCE (sat) typ [V] | 0.23 |
| VCE (sat) max [V] | 0.39 |
| IC [A] | 3.5 |
| IB [mA] | 175 |
| Parameter |
Symbol |
Conditions | Ratings |
Unit |
| Collector-to-Base Voltage |
VCBO |
(50)80 |
V | |
| Collector-to-Emitter Voltage |
VCEO |
()50 |
V | |
| Emitter-to-Base Voltage |
VEBO |
()6 |
V | |
| Collector Current |
IC |
()7 |
A | |
| Collector Current (Pulse) |
ICP |
()10 |
A | |
| Base Current |
IB |
()1.2 |
A | |
| Collector Dissipation |
PC |
Mounted on a ceramic board (250mm2*0.8mm) |
1.3 |
W |
| Tc=25°C |
3.5 |
W | ||
| Junction Temperature |
Tj |
150 |
||
| Storage Temperature |
Tstg |
55 to +150 |