Features: • Adoption of MBIT processes.• Large current capacitance.• Low collector-to-emitter saturation voltage.• High-speed switching.Application• High-speed switching applications (switching regulators, drive circuit)PinoutSpecifications Parameter Symbol Con...
2SA2207: Features: • Adoption of MBIT processes.• Large current capacitance.• Low collector-to-emitter saturation voltage.• High-speed switching.Application• High-speed switchin...
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| Parameter | Symbol | Conditions | Rating | UNIT |
| Collector-base voltage | VCBO | -50 | V | |
| Collector-emitter voltage | VCEO | -50 | V | |
| Emitter-base voltage | VEBO | -6 | V | |
| Peak collector current | ICP | -13 | A | |
| Collector current | IC | -15 | A | |
| Base Current | IB | -2 | A | |
| Collector power dissipation | PC | 1 | W | |
| Tc=25 | 20 | |||
| Jumction temperature | Tj | 150 | ||
| Storage temperature | Tstg | -55 to +150 |
| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 50 |
| IC [A] | 13 |
| PC [W] | 20
Tc=25°C |
| Electrical characteristics | |
|---|---|
| hFE min | 200 |
| hFE max | 500 |
| VCE [V] | 2 |
| IC [A] | 0.27 |
| VCE (sat) typ [V] | 0.25 |
| VCE (sat) max [V] | 0.5 |
| IC [A] | 6 |
| IB [mA] | 300 |