Purchase 2SA816, In-stock 2SA816 From SeekIC.
Package Cooled:TO-220 D/C:04+
- Table of contents:
2SA816
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Suppliers
DataSheet
General Description
2SA0683
PDF/DataSheet Download
- Datasheet: 2SA0683
- File Size: 101532 KB
- Manufacturer: PANASONIC [Panasonic Semiconductor]
- Click here to Download
- ·2SA0684
- PANASONIC [Panasonic Semiconductor]
- Silicon PNP epitaxial planar type
- 101532 KB
- ·2SA0719
- PANASONIC [Panasonic Semiconductor]
- For low-frequency power amplification and driver amplification Complementary
- 83901 KB
- ·2SA0720
- PANASONIC [Panasonic Semiconductor]
- For low-frequency power amplification and driver amplification Complementary
- 83901 KB
- ·2SA0720A
- PANASONIC [Panasonic Semiconductor]
- For low-frequency driver amplification Complementary
- 73878 KB
- ·2SA0777
- PANASONIC [Panasonic Semiconductor]
- For low-frequency driver amplification Complementary
- 83381 KB
- ·2SA0794
- PANASONIC [Panasonic Semiconductor]
- Silicon PNP epitaxial planar type
- 104422 KB
- ·2SA0794A
- PANASONIC [Panasonic Semiconductor]
- Silicon PNP epitaxial planar type
- 104422 KB
- ·2SA0838
- PANASONIC [Panasonic Semiconductor]
- Silicon PNP epitaxial planer type
- 38326 KB
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2SA814
The 2SA814 features: ·With TO-220 package·Complement to type 2SC1624/1625·High breakdown voltage
2SA812-T1B-A
The 2SA812-T1B-A is a PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD. The feature of the 2SA812-T1B-A are:(1)Complementary to 2SC1623 ; (2)High DC Current Gain: hFE = 200 TYP. (VCE = ?6.0 V, IC = -1.0 mA) ) ; (3)High Voltage: VCEO = -50 V . The absolute maxim...
2SA812-M7
The 2SA812-M7 is designed as one kind of PNP silicon epitaxial transistor device that has some points of features:(1)Complementary to 2SC1623;(2)High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) );(3)High Voltage: VCEO = -50 V. Also this devi...
2SA812-M6
The 2SA812-M6 is designed as one kind of PNP silicon epitaxial transistor device that has some points of features:(1)Complementary to 2SC1623;(2)High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) );(3)High Voltage: VCEO = -50 V. Also this devi...
2SA812A-T1B-A M7
The 2SA812A-T1B-AM7 is designed as one kind of PNP silicon epitaxial transistor device that has some points of features:(1)High Voltage: VCEO = -50 V;(2)Epitaxial planar type;(3)NPN complement: L2SC1623;(4)Pb-Free Package is available. Also this device is de...
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