2SA915

The 2SA915 is designed as one kind of PNP silicon transistor that can be used in driver stages of audio frequency amplifiers. Features of the 2SA915 are:(1)high total power dissipation and high breakdown voltage: 1.0 W at 25 ambient temperature / VCEO= -120 V;(2)complementary to the NEC.2SC1940 NPN transistor.

The absolute maximum ratings of the 2SA915 can be summarized as:(1)storage temperature: -55 to +150 ;(2)junction temperature: +150 maximum;(3)total power dissipation: 1.0 W;(4)thermal resistance (junction to ambient): 125 /W;(5)collector to base voltage: -120 V;(6)collector to emitter voltage: -120 V;(7)emitter to base voltage: -5.0 V;(8)collector current: -50 mA;(9)base current: -10 mA.

The electrical characteristics of the 2SA915 can be summarized as:(1)DC current gain hFE1: 90 to 400;(2)DC current gain hFE2: 50 to 200;(3)gain bandwidth product: 50 to 80 MHz;(4)output capacitance: 2.5 to 3.5 pF;(5)collector cutoff current: -100 nA;(6)emitter cutoff current: -10 nA;(7)base to emitter voltage: -650 to -750 mV;(8)collector saturation voltage: -0.18 to -0.6 V;(9)base saturation voltage: -0.79 to -1.0 V. If you want to know more information such as the electrical characteristics about the 2SA915, please download the datasheet in www.seekic.com or www.chinaicmart.com .