2SB1117

The 2SB1117 is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in low-voltage, high-current amp, muting applications. Features of this device are:(1)low collector-to-emitter saturation voltage: VCE(sat) = -0.2 V typ.;(2)large current: Ic(DC) = -3.0 A, Ic(pulse) = -5.0 A;(3)high DC current gain: hFE = 300 typ.;(4)high total power dissipation: PT = 1.0 W.

The absolute maximum ratings of the 2SB1117 can be summarized as:(1)collctor to base voltage: -30 V;(2)collector to emitter voltage: -25 V;(3)emitter to base voltage: -6.0 V;(4)collector current: -3.0 A;(5)collector current (pulse): 1.5 A;(6)collector dissipation: 500 mW;(7)junction temperature: 150 ;(8)storage temperature range: -55 to +150 .

And the electrical characteristics of the 2SB1117 can be summarized as:(1)collector cutoff current: 0.1 uA;(2)emitter cutoff current: 0.1 uA;(3)DC current gain: 135 to 600;(4)gain bandwidth product: 280 MHz;(5)C-E saturation voltage: -0.2 to -0.3 V;(6)B-E saturation voltage: -0.6 to -0.7 V. If you want to know more information such as the electrical characteristics about the 2SB1117, please download the datasheet in www.seekic.com or www.chinaicmart.com .