Features: ` Adoption of FBET, MBIT processes.` Low collector-to-emitter saturation voltage.` Large current capacity and wide ASO.` Fast switching speed.` Very small size making it easy to provide highdensity, small-sized hybrid IC's.Application· Voltage regulators, relay drivers, lamp drivers, ele...
2SB1121: Features: ` Adoption of FBET, MBIT processes.` Low collector-to-emitter saturation voltage.` Large current capacity and wide ASO.` Fast switching speed.` Very small size making it easy to provide hi...
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|
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
Collector-to-Base Voltage |
VCBO |
()30 |
V | |
|
Collector-to-Emitter Voltage |
VCEO |
()25 |
V | |
|
Emitter-to-Base Voltage |
IEBO |
()6 |
V | |
|
Drain Current |
IC |
()2 |
A | |
|
Collector Current (Pulse) |
ICP |
()5 |
A | |
|
Allowable Power Dissipation |
PD |
500 |
W | |
|
Mounted on ceramic board (250mm2X0.8mm) |
1.3 |
W | ||
|
Channel Temperature |
Tj |
150 |
°C | |
|
Storage Temperature |
Tstg |
55 to +150 |
°C |
| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 25 |
| IC [A] | 2 |
| PC [W] | 1.3
When mounted on ceramic substrate (250mm²*0.8mm) 1unit |
| Electrical characteristics | |
|---|---|
| hFE min | 100 |
| hFE max | 560 |
| VCE [V] | 2 |
| IC [A] | 0.1 |
| VCE (sat) typ [V] | 0.35 |
| VCE (sat) max [V] | 0.6 |
| IC [A] | 1.5 |
| IB [mA] | 75 |