2SB1131

The feature of 2SB1131 are as follows: (1)adoption of FBET, MBIT processes; (2)low saturation voltage; (3)large current capacity; (4)fast switching time.

The absolute maximum ratings of the 2SB1131 are: (1)collector to base voltage: -25V; (2)collector to emitter voltage: -20V; (3)emitter to base voltage: -5V; (4)collector current: -5A; (5)collector dissipation: 1W; (6)junction temperature: 150; (7)storage temperature: -55 to +150.

The following is about the electrical characteristics of 2SB1131: (1)collector cut-off current: -500nA max at VCB = -20V, IE = 0; (2)emitter cut-off current: -500nA max at VEB = -4V, IC = 0; (3)DC current gain: 100 min and 400 max at VCE = -2V, IC = -500mA, 60 min at VCE = -2V, IC = -4A; (4)gain-bandwidth product; (5)collector-emitter saturation voltage: -500mV max at IC = -3A, IB = -60mA; (6)base-emitter voltage: -1.3V max at VCE = -3V, IC = -60mA.