Application·For high power amplifier applicationsSpecifications SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-Base Voltage Open emitter -150 V VCEO Collector-Emitter Voltage Open base -150 V VEBO Emitter-Base Voltage Open coll...
2SB1160: Application·For high power amplifier applicationsSpecifications SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-Base Voltage Open emitter -150 V VCEO ...
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SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
VCBO |
Collector-Base Voltage |
Open emitter |
-150 |
V |
VCEO |
Collector-Emitter Voltage |
Open base |
-150 |
V |
VEBO |
Emitter-Base Voltage |
Open collector |
-5 |
V |
IC |
Collector Current |
-9 |
A | |
ICP |
Collector current-peak |
-15 |
||
PC |
Collector dissipation |
TC=25 |
100 |
W |
3 | ||||
Tj |
Junction Temperature |
150 |
||
Tstg |
Storage Temperature Range |
-55~150 |
The 2SB1160 features:
·With TO-3PFa package
·Complement to type 2SD1715
·High fT
·Satisfactory linearity of hFE
·Wide area of safe operation