2SB1184TLR

Transistors Bipolar (BJT) PNP 50V 3A

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SeekIC No. : 00209572 Detail

2SB1184TLR: Transistors Bipolar (BJT) PNP 50V 3A

floor Price/Ceiling Price

US $ .14~.16 / Piece | Get Latest Price
Part Number:
2SB1184TLR
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~2500
  • 2500~5000
  • 5000~10000
  • Unit Price
  • $.16
  • $.15
  • $.14
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 50 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 180 at 0.5 A at 3 V Configuration : Single
Maximum Operating Frequency : 70 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : DPAK
Packaging : Reel    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 50 V
Package / Case : DPAK
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 3 A
Maximum Operating Frequency : 70 MHz
DC Collector/Base Gain hfe Min : 180 at 0.5 A at 3 V


Description

The 2SB1184TLR is one member of the 2SB1184 family which is designed as the power transistor that has two points of features:(1)low VCE(sat): VCE(sat) = -0.5V (typ.) (IC/IB = -2A / -0.2A) ; (2)complements the 2SD1760 / 2SD1864. And the structure of this device is epitaxial planar type PNP silicon transistor.

The absolute maximum ratings of the 2SB1184TLR can be summarized as:(1)Collector-base voltage: -60 V;(2)Collector-emitter voltage: -50 V;(3)Emitter-base voltage: -5 V;(4)Collector current Ic: -3 A;(5)Collector current ICP: -4.5 A;(6)Junction temperature: 150 ;(7)Storage temperature: -55 to +150 .

The electrical characteristics of 2SB1184TLR can be summarized as:(1)Collector-base breakdown voltage: -60 V;(2)Collector-emitter breakdown voltage: -50 V;(3)Emitter-base breakdown voltage: -5 V;(4)Collector cutoff current: -1 A;(5)Emitter cutoff current: -1 A;(6)Collector-emitter saturation voltage: -1 V;(7)Base-emitter saturation voltage: -1.2 V;(8)DC current transfer ratio: 82 to 390;(9)Transition frequency: 70 MHz;(10)Output capacitance: 50 pF. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog Information2SB1184TLR
VendorRohm Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)3A
Power - Max15W
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 500mA, 3V
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 2A
Frequency - Transition70MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SB1184TLR
2SB1184TLR
2SB1184TLRTR ND
2SB1184TLRTRND
2SB1184TLRTR



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