2SB1229-T

The 2SB1229-T is designed as one kind of silicon PNP epotaxial type that has four points of features:(1)adoption of FBET, MBIT processes;(2)large current capacity;(3)low collector-to-emitter saturation voltage;(4)fast switching time. And this device can be used in voltage regulators, relay drivers, lamp drivers and electrical equipment.

The absolute maximum ratings of the 2SB1229-T can be summarized as:(1)collector-base voltage: -60 V;(2)collector-emitter voltage: -50 V;(3)emitter-base voltage: -6 V;(4)collector current: -2 A;(5)collector power dissipation: 0.75 W;(6)junction temperature: 150 ;(7)storage tmeperature range: -55 to +150 .

And the electrical characteristics of the 2SB1229-T can be summarized as:(1)collector cut-off current: -0.1 mA;(2)emitter cut-off current: -0.1 mA;(3)collector-emitter breakdown voltage: -100 V;(4)DC current gain: 100 to 560;(5)collector-emitter saturation voltage: 0.15 to 0.4 V;(6)base-emitter saturation voltage: -1.5 V. If you want to know more information such as the electrical characteristics about the 2SB1229-T, please download the datasheet in www.seekic.com or www.chinaicmart.com .