2SB1496

The 2SB1495 is designed as one kind of silicon PNP epotaxial type that has three points of features:(1)high DC current gain: hFE=2000 (min.) (VCE= -2 V, Ic= -2 A);(2)low saturation voltage: VCE(sat)= -1.5 V (max.) (Ic= -1.5 A);(3)complements the 2SD2257.

The absolute maximum ratings of the 2SB1495 can be summarized as:(1)collector-base voltage: -100 V;(2)collector-emitter voltage: -100 V;(3)emitter-base voltage: -8 V;(4)collector current: -3 A;(5)collector power dissipation: 2.0 W;(6)junction temperature: 150 ;(7)storage tmeperature range: -55 to +150 .

And the electrical characteristics of the 2SB1495 can be summarized as:(1)collector cut-off current: -10 uA;(2)emitter cut-off current: -0.8 to -4.0 mA;(3)collector-emitter breakdown voltage: -100 V;(4)DC current gain: 2000;(5)collector-emitter saturation voltage: -1.5 V;(6)base-emitter saturation voltage: -2.0 V. If you want to know more information such as the electrical characteristics about the 2SB1495, please download the datasheet in www.seekic.com or www.chinaicmart.com .