2SB624-T1B BV4

The 2SB624-T1B BV4 is one member of the 2SB624 family which is designed as the silicon epitaxial planar transistor device that can be used in audio frequency amplifier and switching appilications. Features of the 2SB624-T1B-A are:(1)Complimentary to the 2SD596;(2)High DC current gain.hFE: 200 typ (VCE=-1.0 V,IC=-100 mA).

The absolute maximum ratings of the 2SB624-T1B BV4 can be summarized as:(1)Collector-Base Voltage: -30 V;(2)Collector-Emitter Voltage: -25 V;(3)Emitter-Base Voltage: -5 V;(4)Collector Current -Continuous: -700 mA;(5)Collector Dissipation: 250 mW;(6)Junction and Storage Temperature: -55 to 150 .

The electrical characteristics of this device can be summarized as:(1)Collector-base breakdown voltage: -30 V;(2)Collector-emitter breakdown voltage: -25 V;(3)Emitter-base breakdown voltage: -5 V;(4)Collector cut-off current: -0.1 A;(5)Emitter cut-off current: -0.1 A;(6)DC current gain: 110 to 400;(7)Collector-emitter saturation voltage: -0.6 V;(8)Base-emitter voltage: -0.7 V;(9)Transition frequency: 160 MHz;(10)Collector output capacitance: 17 pF. If you want to know more information such as the electrical characteristics about the 2SB624-T1B BV4, please download the datasheet in www.seekic.com or www.chinaicmart.com.