2SB755

      The 2SB755 is a kind of  silicon PNP power transistor.Here you can get some information about the features.It has high breakdown voltage:V_CEO=-150V(min) and high transition frequency.It is complement to type 2SD845.
      The following is about the maximum ratings of 2SB755 at Ta=25.The collector-base voltage (V_CBO) is -150 V.The collector-emitter voltage (V_CEO) is -150 V.The emitter-base voltage (V_EBO) is -5 V.The collector current (IC) is -12 A.The base current (I_B) is -12 A.The collector power dissipation (P_C) is 120 W.The junction temperature is 150.The storage temperature is (T_stg) from -55 to 150.
      What comes next is the electrical characteristics of 2SB755 at Ta=25.The maximum collector cutoff current(I_CBO) is -50 A at V_CB=-150 V and IE=0.The maximum emitter cutoff current (I_EBO) is -50 A at V_EB=-150 V and I_C=0.The minimum collector-emitter breakdown voltage (V_(BR)CEO) is -150V at I_C=-0.1 A and I_B=0.The minimum emitter-base breakdown voltage (V_(BR)EBO) is -5V at I_C=-10mA and I_C=0.The minimum h_FE is 55 and the maximum is 160 at V_CE=-5V and I_C=-1A.The maximum collector to emitter saturation voltage (V_CE(sat)) is -2.0 V at I_C=-5 A and I_B=-0.5 A.The maximum V_BE is -1.5 V at V_CE=-5 V and I_C=-5A.The typical transition frequency (f_T) is 20 MHz at V_CE=-10 V and I_C=-1A.The typical output capacitance (C_ob) is 450 pF at V_CB=-10 V,I_E=0 and f=1 MHz.