Features: · High breakdown voltage.· Large current capacity.· Adoption of MBIT process.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-base voltage VCBO ()180 V Collector-emitter voltage VCEO ()160 V Emitter-base voltage VEBO...
2SC3117: Features: · High breakdown voltage.· Large current capacity.· Adoption of MBIT process.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-base voltage VCBO ...
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| Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Collector-base voltage |
VCBO |
()180 |
V | |
| Collector-emitter voltage |
VCEO |
()160 |
V | |
| Emitter-base voltage |
VEBO |
()6 |
V | |
| Collector current |
Ic |
()1.5 |
A | |
| Collector Current (Pulse) |
ICP |
()2.5 |
A | |
| Collector Dissipation |
PC |
Tc=25°C |
1 10 |
W |
| Junction temperature |
Tj |
150 |
°C | |
| Storage temperature |
Tstg |
-55 to +150 |
°C |
| Absolute maximum ratings | |
|---|---|
| VCBO [V] | 180 |
| VCEO [V] | 160 |
| IC [A] | 1.5 |
| PC [W] | 10 |
| Electrical characteristics | |
|---|---|
| hFE min | 100 |
| hFE max | 400 |
| VCE [V] | 5 |
| IC [mA] | 100 |
| fT typ [MHz] | 120 |
| VCE [V] | 10 |
| IC [mA] | 50 |
| VCE (sat) typ [V] | 0.13 |
| VCE (sat) max [V] | 0.45 |
| IC [mA] | 500 |
| IB [mA] | 50 |