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2SC3279

Application• High DC current gain and excellent hFE linearity: hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A): hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A)• Low saturation voltage: VCE (sat) = 0.5 V (max)(IC = 2 A, IB = 50 mA)Specifications Symbol Characteristics Rating Unit...

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2SC3279: Application• High DC current gain and excellent hFE linearity: hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A): hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A)• Low saturation voltage: VC...

2SC3279 Data Sheet

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Part Number:
2SC3279
Supply Ability:
5000

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  • 1~5000
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  • Processing time
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Product Details

Description



Application

• High DC current gain and excellent hFE linearity
: hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A)
• Low saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 2 A, IB = 50 mA)




Specifications

Symbol Characteristics Rating Unit
VCBO Collector-base voltage 30 V
VEBO Collector-emitter voltage 6 V
VCES

VCEO		 Collector-emitter voltage 30

10		 V
IC

ICP

 Collector current DC
Pulsed
(Note 1)		 2

5		 A
IB Base current 0.2 A

PC

 Collector power dissipation 750
 mW
TJ Junction temperature 150
Tstg Storage temperature range −55~150


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)






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