2SC3307

Features:

• Excellent switching times: tr = 1.0 s (max), tf = 1.0 s (max) (I_C = 5 A)
• High collector breakdown voltage: V_CEO = 800 V





Specifications

Characteristics		Symbol	Rating	Unit
Collector-base voltage		VCBO	900	V
Collector-emitter voltage		VCEO	800	V
Emitter-base voltage		VEBO	7	V
Collector current	DC	IC	10	A
	Pulse	ICP	15
Base current		IB	3	A
Collector power dissipation (Tc = 25)		PC	40	W
Junction temperature		Tj	150
Storage temperature		Tstg	-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and
the significant change in temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).