2SC3356 R25

The 2SC3356 is designed as one kind of microwave low noise amplifier NPN silicon epitaxial transistor that has dynamic range and good current characteristic such as (1)Low Noise and High Gain: NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz;(2)High Power Gain: MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz.

The absolute maximum ratings of the 2SC3356 can be summarized as:(1)Collector to Base Voltage: 20 V;(2)Collector to Emitter Voltage: 12 V;(3)Emitter to Base Voltage: 3.0 V;(4)Collector Current: 100 mA;(5)Total Power Dissipation: 200 mW;(6)Junction Temperature: 150 ;(7)Storage Temperature: -65 to +150 .

The electrical characteristics of  2SC3356 can be summarized as:(1)Collector Cutoff Current: 1.0 uA;(2)Emitter Cutoff Current: 1.0 uA;(3)DC Current Gain: 50 to 300;(4)Gain Bandwidth Product: 7 GHz;(5)Feed-Back Capacitance: 0.55 to 1.0 pF;(6)Insertion Power Gain: 11.5 dB;(7)Noise Figure: 1.1 to 2.0 dB. If you want to know more information about the 2SC3356, please download the datasheet in www.seekic.com or www.chinaicmart.com .