2SC3651

Features: ` High DC current gain (hFE=500 to 2000).` High breakdown voltage (VCEO100V).` Low collector-to-emitter saturation voltage (VCE(sat)0.5V).` High VEBO (VEBO15V).` Very small size making it easy to provide highdensity, small-sized hybrid IC's.Application· LF amplifiers, various drivers, mu...

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SeekIC No. : 004222445 Detail

2SC3651: Features: ` High DC current gain (hFE=500 to 2000).` High breakdown voltage (VCEO100V).` Low collector-to-emitter saturation voltage (VCE(sat)0.5V).` High VEBO (VEBO15V).` Very small size making it ...

floor Price/Ceiling Price

Part Number:
2SC3651
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/30

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Product Details

Description



Features:

` High DC current gain (hFE=500 to 2000).
` High breakdown voltage (VCEO100V).
` Low collector-to-emitter saturation voltage (VCE(sat)0.5V).
` High VEBO (VEBO15V).
` Very small size making it easy to provide highdensity, small-sized hybrid IC's.





Application

· LF amplifiers, various drivers, muting circuit.




Pinout






Specifications

Absolute maximum ratings
VCEO [V] 100
VEBO [V] 15
IC [A] 0.2
PC [W] 1.3
When mounted on glass epoxy substrate
Electrical characteristics
hFE min 500
hFE max 2000
VCE [V] 5
IC [mA] 10
VCE (sat) typ [V] 0.15
VCE (sat) max [V] 0.5
IC [mA] 100
IB [mA] 2


Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 120 V
Collector-to-Emitter Voltage VCEO 100 V
Emitter-to-Base Voltage VEBO 15 V
Collector Current IC 200 mA
Collector Current (Pulse) ICP 300 mA
Collector Dissipation PC 500 mW
PC* 1.3 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg 55 to +150 °C

* Mounted on ceramic board (250mm2*0.8mm)




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