2SC380TM-Y

The 2SC380TM-Y is designed as the TOSHIBA transistor silicon NPN epitaxial silicon transistor device that can be used in high frequency amplifier applications. And this device has two points of features: (1)high power gain: Gpe = 29 dB (typ.) (f = 10.7 MHz);(2)recommended for FM IF, OSC stage and AM CONV.IF stage.

The absolute maximum ratings of the 2SC380TM-Y can be summarized as:(1)Collector to Base Voltage: 35 V;(2)Collector to Emitter Voltage: 30 V;(3)Emitter to Base Voltage: 4.0 V;(4)Collector Current: 50 mA;(5)Total Power Dissipation: 300 mW;(6)Junction Temperature: 125 ;(7)Storage Temperature: -55 to +125 .

The electrical characteristics of this device can be summarized as:(1)Collector Cutoff Current: 0.1 uA;(2)Emitter Cutoff Current: 0.1 uA;(3)DC Current Gain: 40 to 240;(4)Dc current gain: 40 to 240;(5)collector-emitter saturation voltage: 0.4 V;(5)base-emitter voltage: 1.0 V;(6)transition frequency: 100 to 400 MHz;(7)collector output capacitance: 1.4 to 3.2 pF;(8)collector-base time constant: 10 to 50 ps;(9)power gain: 27 to 33 dB. If you want to know more information such as the electrical characteristics about the 2SC380TM-Y, please download the datasheet in www.seekic.com or www.chinaicmart.com.