DescriptionThe 2SC3860 is a pnp/npn epitaxial planar silicon transistors,switching applications(with bias resistance).Features of the 2SC3860 are:(1)on-chip bias resistance:R1=10k; (2)small-sized package:SPA. The absolute maximum ratings of the 2SC3860 can be summarized as:(1)collector to base vo...
2SC3860: DescriptionThe 2SC3860 is a pnp/npn epitaxial planar silicon transistors,switching applications(with bias resistance).Features of the 2SC3860 are:(1)on-chip bias resistance:R1=10k; (2)small-sized pa...
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The 2SC3860 is a pnp/npn epitaxial planar silicon transistors,switching applications(with bias resistance).Features of the 2SC3860 are:(1)on-chip bias resistance:R1=10k; (2)small-sized package:SPA.
The absolute maximum ratings of the 2SC3860 can be summarized as:(1)collector to base voltage:(-)50V; (2)collector to emitter voltage:(-)50V; (3)emitter to base voltage:(-)5V; (4)collector current:(-)100mA; (5)collector current(pulse):(-)200mA; (6)collector dissipation:300mW; (7)junction temperature:150; (8)storage temperature:-55~150.
The electrical characteristics at TA=25°C of the 2SC3860 can be summarized as:(1)collector cutoff current:(-)0.1A; (2)emitter curoff current:(-)0.1A; (3)dc current gain:100; (4)gain-band width product:250MHz; (5)output capacitance:3.7pF; (6)collector to emitter saturation voltage:(-)0.3V; (7)collector to base breakdown voltage:(-)50V; (8)collector to emitter berakdown voltage:(-)50V; (9)input off voltage:(-)0.4~(-)0.8V; (10)input on voltage:(-)0.7~(-)3.0V; (11)input resistance:7.0~13k.If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .