Features: · High gain-bandwidth product : fT=300MHz.· High breakdown voltage : VCEO=200Vmin.· Small reverse transfer capacitance and excellent high frequency characteristics : Cre=1.5pF/NPN, 1.8pF/ PNP. · Complementary PNP and NPN types.· Adoption of FBET process.· Micaless type : TO-126 plastic p...
2SC3955: Features: · High gain-bandwidth product : fT=300MHz.· High breakdown voltage : VCEO=200Vmin.· Small reverse transfer capacitance and excellent high frequency characteristics : Cre=1.5pF/NPN, 1.8pF/ ...
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|
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Collector-base voltage |
VCBO |
(-)200 |
V | |
| Collector-emitter voltage |
VCEO |
(-)200 |
V | |
| Emitter-base voltage |
VEBO |
(-)3 |
V | |
| Collector current |
IC |
(-)100 |
A | |
| Collector current(Pulse) |
ICP |
(-)200 |
A | |
| Collector Dissipation |
PC |
1.3 |
W | |
|
Tc=25°C |
7 |
|||
| Junction temperature |
Tj |
150 |
||
| Storage temperature |
Tstg |
55 to +150 |
| Absolute maximum ratings | |
|---|---|
| VCBO [V] | 200 |
| VCEO [V] | 200 |
| VEBO [V] | 3 |
| IC [mA] | 100 |
| PC [mW] | 7000
Tc=25°C |
| Electrical characteristics | |
|---|---|
| hFE min | 40 |
| hFE max | 320 |
| VCE [V] | 10 |
| IC [mA] | 10 |
| fT typ [GHz] | 0.3 |
| VCE [V] | 30 |
| IC [mA] | 30 |
| Cob typ [pF] | 1.9 |
| VCB [V] | 30 |
| VCE (sat) max [V] | 1 |
| IC [mA] | 20 |
| IB [mA] | 2 |
| Cre typ [pF] | 1.5 |