2SC4214

Features:

• Low noise figure: N_F = 2.8dB (typ.)
• High power gain V_CC = 4.5 V: Gpb = 15dB (typ.)
• Excellent forward AGC characteristics





Pinout




Specifications

Characteristics	Symbol	Rating	Unit
Collector-base voltage	VCBO	25	V
Collector-emitter voltage	VCEO	20	V
Emitter-base voltage	VEBO	2	V
Base current	IB	4	mA
Collector current	IC	20	mA
Collector power dissipation	PC	150	mW
Junction temperature	Tj	125
Storage temperature	Tstg	-55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and
          the significant change in temperature, etc.) may cause this product to decrease in the reliability
          significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within
          the absolute maximum ratings.

          Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
          ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e.
          reliability test report and estimated failure rate, etc).




Description