2SC4322

DescriptionThe 2SC4322 is a kind of transistor. It is silicon NPN epitaxial planar type. It is intended for VHF-UHF band low noise amplifier applications. There are some features as follows: (1)low noise figure, high gain; (2)NF=1.8 dB, |S21e|2=7.5 dB (f=2 GHz). What comes next is the absolute m...

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SeekIC No. : 004222887 Detail

2SC4322: DescriptionThe 2SC4322 is a kind of transistor. It is silicon NPN epitaxial planar type. It is intended for VHF-UHF band low noise amplifier applications. There are some features as follows: (1)low ...

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Part Number:
2SC4322
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Description

The 2SC4322 is a kind of transistor. It is silicon NPN epitaxial planar type. It is intended for VHF-UHF band low noise amplifier applications. There are some features as follows: (1)low noise figure, high gain; (2)NF=1.8 dB, |S21e|2=7.5 dB (f=2 GHz).

What comes next is the absolute maximum ratings of 2SC4322(Ta=25): (1)collector-base voltage, VCBO: 20 V; (2)collector-emitter voltage, VCEO: 10 V; (3)emitter-base voltage, VEBO: 1.5 V; (4)collector current, IC: 15 mA; (5)base current, IB: 7 mA; (6)collector power dissipation, PC: 150 mW; (7)junction temperature, Tj: 125; (8)storage temperature range, Tstg: -55 to 125.

The following is the electrical characteristics of 2SC4322(Ta=25): (1)collector cutoff current, ICBO: 1A max at VCB=10 V, IE=0; (2)emitter cutoff current, IEBO: 1A max at VEB=1 V, IC=0; (3)DC current gain, hFE: 50 min and 250 max at VCE=6 V, IC=7 mA; (5)output capacitance, Cob: 0.45 pF typ at VCB=10 V, IE=0, f=1 MHz; (6)reverse transfer capacitance, Cre: 0.35 pF typ and 0.8 pF max at VCB=10 V, IE=0, f=1 MHz; (7)transition frequency, fT: 7 GHz min and 10 GHz max at VCE=6 V, IC=7 mA; (8)insertion gain, |S21e|2: 13 dB typ at VCE=6 V, IC=7 mA, f=1 GHz; 4.5 dB min and 7.5 dB typ at VCE=6 V, IC=7 mA, f=2 GHz; (9)noise figure, NF: 1.4 dB typ at VCE=6 V, IC=3 mA, f=1 GHz; 1.8 dB typ and 3.0 dB max at VCE=6 V, IC=3 mA, f=2 GHz.




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