Features: Adoption of MBIT process.High DC current gain.High VEBO (VEBO 25V).High reverse hFE (150 typ).Small ON resistance [Ron=1(IB=5mA)].PinoutSpecifications Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V ...
2SC4694: Features: Adoption of MBIT process.High DC current gain.High VEBO (VEBO 25V).High reverse hFE (150 typ).Small ON resistance [Ron=1(IB=5mA)].PinoutSpecifications Parameter Symbol Rating ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

| Parameter |
Symbol |
Rating |
Unit |
| Collector-base voltage |
VCBO |
50 |
V |
| Collector-emitter voltage |
VCEO |
20 |
V |
| Emitter-base voltage |
VEBO |
25 |
V |
| Collector current |
IC |
500 |
mA |
| Collector current (pulse) |
ICP |
800 |
mA |
| Base current |
IB |
100 |
mA |
| Collector dissipation |
PC |
150 |
Mw |
| Junction temperature |
Tj |
150 |
|
| Storage temperature |
Tstg |
-55 to +150 |
| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 20 |
| VEBO [V] | 25 |
| IC [A] | 0.5 |
| PC [W] | 0.15 |
| Electrical characteristics | |
|---|---|
| hFE min | 300 |
| hFE max | 1200 |
| VCE [V] | 5 |
| IC [mA] | 10 |
| VCE (sat) typ [V] | 0.12 |
| VCE (sat) max [V] | 0.5 |
| IC [mA] | 100 |
| IB [mA] | 2 |