Features: ` Large current (IC=2A).` Adoption of MBIT process.` High DC current gain (hFE=800 to 3200).` Low collector-to-emitter saturation voltage (VCE(sat)0.5V).` High emitter-to-base voltage (VEBO15V).` Large power type such as PC=1.5W when used without heatsink.` It is possible to make applian...
2SC4736: Features: ` Large current (IC=2A).` Adoption of MBIT process.` High DC current gain (hFE=800 to 3200).` Low collector-to-emitter saturation voltage (VCE(sat)0.5V).` High emitter-to-base voltage (VEB...
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| Parameter | Symbol | Conditions | Ratings | Unit |
| Collector-to-Base Voltage | VCBO | 80 | V | |
| Collector-to-Emitter Voltage | VCEO | 60 | V | |
| Emitter-to-Base Voltage | VEBO | 15 | V | |
| Collector Current | IC | 2 | A | |
| Collector Current (Pulse) | ICP | 4 | A | |
| Base Current | IB | 400 | mA | |
| Collector Dissipation | PC | 1.5 | W | |
| Junction Temperature | Tj | 150 | °C | |
| Storage Temperature | Tstg | 55 to +150 | °C |
| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 60 |
| VEBO [V] | 15 |
| IC [A] | 2 |
| PC [W] | 1.5 |
| Electrical characteristics | |
|---|---|
| hFE min | 800 |
| hFE max | 3200 |
| VCE [V] | 5 |
| IC [mA] | 500 |
| VCE (sat) typ [V] | 0.2 |
| VCE (sat) max [V] | 0.5 |
| IC [mA] | 1000 |
| IB [mA] | 20 |