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2SC5008

Features: • Low Voltage Use.• High fT: 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)• Low Cre: 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)• Low NF: 1.9 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)• High |S21e|2: 7.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)•...

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SeekIC No. : 004223266 Detail

2SC5008: Features: • Low Voltage Use.• High fT: 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)• Low Cre: 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)• Low NF: 1.9 dB TYP. (@ VCE = 3...

2SC5008 Data Sheet

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Part Number:
2SC5008
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low Voltage Use.
• High fT: 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
• Low Cre: 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
• Low NF: 1.9 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
• High |S21e|2: 7.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
• Ultra Super Mini Mold Package.


Specifications

Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
1.5
V
Collector current
IC
35
A
Collector power dissipation
PT
125
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-65to+150
°C



Description

The 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC
proprietary fabrication technique.




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