Features: · High current capacity.· Adoption of MBIT process.· High DC current gain.· Low collector-to-emitter saturation voltage.· High VEBO.Application· Various drivers.Specifications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 50 V Collector-to-Em...
2SC5155: Features: · High current capacity.· Adoption of MBIT process.· High DC current gain.· Low collector-to-emitter saturation voltage.· High VEBO.Application· Various drivers.Specifications Paramet...
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| Parameter | Symbol | Conditions | Ratings | Unit |
| Collector-to-Base Voltage | VCBO | 50 | V | |
| Collector-to-Emitter Voltage | VCEO | 20 | V | |
| Emitter-to-Base Voltage | VEBO | 15 | V | |
| Collector Current | IC | 3 | A | |
| Collector Current (Pulse) | ICP | 6 | A | |
| Base Current | IB | 0.6 | A | |
| Collector Dissipation | PC | 1 | W | |
| Tc=25°C | 20 | W | ||
| Junction Temperature | Tj | 150 | °C | |
| Storage Temperature | Tstg | 55 to +150 | °C |