2SC5256FT

DescriptionThe 2SC5256FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier application.2SC5256FT has two features. (1)Low noise figure which would be 1.5dB at f=2GHz. (2)High gain which would be 9.5dB at f=2GHz. Those are all the main feature...

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SeekIC No. : 004223436 Detail

2SC5256FT: DescriptionThe 2SC5256FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier application.2SC5256FT has two features. (1)Low noise figure which w...

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Part Number:
2SC5256FT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Description



Description

The 2SC5256FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier application.

2SC5256FT has two features. (1)Low noise figure which would be 1.5dB at f=2GHz. (2)High gain which would be 9.5dB at f=2GHz. Those are all the main features.

Some absolute maximum ratings of 2SC5256FT have been concluded into several points as follow. (1)Its collector to base voltage would be 15V. (2)Its collector to emitter voltage would be 7V. (3)Its emitter to base voltage would be 1.5V. (4)Its collector current would be 40mA. (5)Its base current would be 20mA. (6)Its collector power dissipation would be 100mW. (7)Its junction temperature would be 125°C. (8)Its storage temperature range would be from -55°C to 125°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2SC5256FT are concluded as follow. (1)Its collector cutoff current would be max 1uA with conditions of Vcb=10V and Ie=0. (2)Its emitter cutoff current would be max 1uA with conditions of Veb=1V and Ic=0. (3)Its DC current gain would be min 50 and max 160 with conditions of Vce=5V and Ic=20mA. (4)Its output capacitance would be typ 0.65pF with conditions of Vcb=10V, Ie=0 and f=1MHz. (5)Its reverse transfer capacitance would be typ 0.5pF and max 0.95pF with conditions of Vcb=10V, Ie=0 and f=1MHz. (6)Its transition frequency would be min 9GHz and typ 12GHz. (10)Its insertion gain would be typ 15dB at f=1Ghz and would be min 6.5dB and typ 9.5dB at 2GHz. (11)Its noise figure would be typ 1.1dB at 1GHz and would be typ 1.5dB and max 3dB at 2GHz.

It should be noted that the information contained herein is presented only as a guide for the applications of toshiba products. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information about 2SC5256FT please contact us for details. Thank you!




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