2SC5266A

DescriptionThe 2SC5266A is designed as toshiba transistor silicon NPN epitaxial planar type for switching regulator applications, high voltage switching applications and DC-DC converter applications.2SC5266A has three features. (1)Excellent switching times which would be 0.5us max for tT and 0.3us...

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SeekIC No. : 004223445 Detail

2SC5266A: DescriptionThe 2SC5266A is designed as toshiba transistor silicon NPN epitaxial planar type for switching regulator applications, high voltage switching applications and DC-DC converter applications...

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Part Number:
2SC5266A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Description

The 2SC5266A is designed as toshiba transistor silicon NPN epitaxial planar type for switching regulator applications, high voltage switching applications and DC-DC converter applications.

2SC5266A has three features. (1)Excellent switching times which would be 0.5us max for tT and 0.3us max for tf. (2)High collector breakdown voltage which would be 400V. (3)High DC current gain which would be 20 min. Those are all the main features.

Some absolute maximum ratings of 2SC5266A have been concluded into several points as follow. (1)Its collector to base voltage would be  600V. (2)Its collector to emitter voltage would be 400V. (3)Its emitter to base voltage would be 7V. (4)Its collector current would be 5A for DC and would be 7A for pulse. (5)Its base current would be 2A. (6)Its collector power dissipation would be 1.8W. (7)Its junction temperature would be 150°C. (8)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2SC5266A are concluded as follow. (1)Its collector cutoff current would be max 100uA with conditions of Vcb=500V and Ie=0. (2)Its emitter cutoff current would be max 100nA with conditions of Veb=7V and Ic=0. (3)Its collector to emitter breakdown voltage would be min 600V. (4)Its DC current gain would be min 13 with conditions of Vce=5V and Ic=1mA. (5)Its collector to emitter saturation voltage would be max 1V. (6)Its base to emitter saturation voltage would be max 1.3V.

It should be noted that the information contained herein is presented only as a guide for the applications of toshiba products. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information about 2SC5266A please contact us for details. Thank you!




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