2SC5307

The 2SC5307 is a kind of transistor. It is silicon NPN triple diffused type. It is intended for high voltage switching applications. There are two features as follows: (1)low saturation voltage: VCE(sat)=0.4 V (typ) (IC=20 mA, IB=0.5 mA); (2)high voltage: VCEO=400 V.

What comes next is the absolute maximum ratings of 2SC5307 (Ta=25): (1)collector-base voltage, VCBO: 400 V; (2)collector-emitter voltage, VCEO: 400 V; (3)emitter-base voltage, VEBO: 7 V; (4)collector current, DC, IC: 50 mA; (5)collector current, pulse, ICP: 100 mA ; (6)base current, IB: 25 mA ; (7)collector power dissipation, PC: 500 mW at Ta=25 and 1000 mW when mounted on ceramic substrate; (8)junction temperature, Tj: 150; (9)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SC5307(Ta=25): (1)collector cutoff current, ICBO: 1.0A max at VCB=400 V, IE=0; (2)emitter cutoff current, IEBO: 1.0A max at VEB=7 V, IC=0; (3)collector-emitter breakdown voltage, V(BR)CEO: 400 V min at IC=1 mA, IB=0; (4)DC current gain, hFE: 100 min and 300 max at VCE=5 V, IC=20 mA; 80 min at VCE=5 V, IC=1 mA; (5)collector-emitter saturation voltage, VCE(sat): 0.4 V typ and 1.0 V max at IC=20 mA, IB=0.5 mA; (6)base-emitter voltage, VBE: 0.7 V typ and 0.85 V max at IC=20 mA, VCE=5 V; (7)collector output capacitance, Cob: 4.0 pF typ at VCB=10 V, IE=0, f=1 MHz.