2SC5319

The 2SC5319 is a kind of transistor. It is silicon NPN epitaxial planar type. The device is designed for VHF-UHF band low noise amplifier applications. There are some features as follows: (1)low noise figure, NF: 1.3 dB (f=2 GHz); (2)high gain, Ga: 11.5 dB (f=2 GHz).

What comes next is the maximum ratings of 2SC5319 (Ta=25): (1)collector-base voltage, VCBO: 8 V; (2)collector-emitter voltage, VCEO: 5 V; (3)emitter-base voltage, VEBO: 1.5 V; (4)collector current, IC: 20 mA; (5)base current, IB: 10 mA; (6)collector power dissipation, PC: 100 mW; (7)junction temperature, Tj: 125; (8)storage temperature range, Tstg: -55 to 125.

The last one is the electrical characteristics of 2SC5319 (Ta=25): (1)collector cut-off current, ICBO: 1A max at VCB=8 V, IE=0; (2)emitter cut-off current, IEBO: 1A max at VEB=1 V, IC=0; (3)DC current gain, hFE: 50 min and 250 max at VCE=3 V, IC=15 mA; (4)output capacitance, Cob: 0.6 pF typ at VCB=2.5 V, IE=0, f=1 MHz; (5)reverse transfer capacitance, Cre: 0.4 pF typ and 0.85 pF max at VCB=2.5 V, IE=0, f=1 MHz.