2SC5322FT

DescriptionThe 2SC5322FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier application.2SC5322FT has two features. (1)Low noise figure which would be 1.4dB at f=2GHz. (2)High gain which would be 10dB at f=2GHz. Those are all the main features...

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SeekIC No. : 004223485 Detail

2SC5322FT: DescriptionThe 2SC5322FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier application.2SC5322FT has two features. (1)Low noise figure which w...

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Part Number:
2SC5322FT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Description



Description

The 2SC5322FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier application.

2SC5322FT has two features. (1)Low noise figure which would be 1.4dB at f=2GHz. (2)High gain which would be 10dB at f=2GHz. Those are all the main features.

Some absolute maximum ratings of 2SC5322FT have been concluded into several points as follow. (1)Its collector to base voltage would be 8V. (2)Its collector to emitter voltage would be 5V. (3)Its emitter to base voltage would be 1.5V. (4)Its collector current would be 10mA. (5)Its base current would be 5mA. (6)Its collector power dissipation would be 100mW. (7)Its junction temperature would be 125°C. (8)Its storage temperature range would be from -55°C to 125°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2SC5322FT are concluded as follow. (1)Its collector cutoff current would be max 1uA with conditions of Vcb=8V and Ie=0. (2)Its emitter cutoff current would be max 1uA with conditions of Veb=1V and Ic=0. (3)Its DC current gain would be min 50 and max 250 with conditions of Vce=3V and Ic=7mA. (4)Its output capacitance would be typ 0.4pF with conditions of Vcb=2.5V, Ie=0 and f=1MHz. (5)Its reverse transfer capacitance would be typ 0.3pF and max 0.7pF with conditions of Vcb=2.5V, Ie=0 and f=1MHz. (6)Its transition frequency would be min 9GHz. (10)Its insertion gain would be min 12.5dB and typ 15.5dB at f=1Ghz and would be min 7dB and typ 10dB at 2GHz. (11)Its noise figure would be typ 0.9dB and max 1.8dB at 1GHz and would be typ 1.4dB and max 2.2dB at 2GHz.

It should be noted that the information about 2SC5322FT contained herein is presented only as a guide for the applications of toshiba products. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!




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