2SC5368

DescriptionThe 2SC5368 is designed as toshiba transistor silicon NPN epitaxial planar type for switching regulator applications and high voltage switching applications and DC-DC converter applications.2SC5368 has three features. (1)High speed which would be 0.5us max for tT and 0.3us max for tf. (...

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SeekIC No. : 004223529 Detail

2SC5368: DescriptionThe 2SC5368 is designed as toshiba transistor silicon NPN epitaxial planar type for switching regulator applications and high voltage switching applications and DC-DC converter applicatio...

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Part Number:
2SC5368
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/5

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Product Details

Description



Description

The 2SC5368 is designed as toshiba transistor silicon NPN epitaxial planar type for switching regulator applications and high voltage switching applications and DC-DC converter applications.

2SC5368 has three features. (1)High speed which would be 0.5us max for tT and 0.3us max for tf. (2)High collector breakdown voltage which would be 450V for Vceo. (3)High DC current gain which would be min 20 at Ic=0.3A. Those are all the main features.

Some absolute maximum ratings of 2SC5368 have been concluded into several points as follow. (1)Its collector to base voltage would be 650V. (2)Its collector to emitter voltage would be 450V. (3)Its emitter to base voltage would be 7V. (4)Its collector current would be 2A for DC and would be 4A for pulse. (5)Its base current would be 0.5A. (6)Its collector power dissipation would be 1.5W at Ta=25°C and would be 10W at Tc=25°C. (7)Its junction temperature would be 150°C. (8)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2SC5368 are concluded as follow. (1)Its collector cutoff current would be max 20uA with conditions of Vcb=520V and Ie=0. (2)Its emitter cutoff current would be max 10uA with conditions of Veb=7V and Ic=0. (3)Its DC current gain would be min 13 with conditions of Vce=5V and Ic=1mA. (4)Its collector to emitter saturation voltage would be max 1.0V with conditions of Ic=0.8A and Ib=0.1A. (5)Its base to emitter voltage would be max 1.3V with conditions of Ic=0.8A and Ib=0.1A. (6)Its collector to base breakdown voltage would be min 650V. (7)Its collector to emitter breakdown voltage would be min 450V.

It should be noted that the information contained herein is presented only as a guide for the applications of toshiba products. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information about 2SC5368 please contact us for details. Thank you!




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