DescriptionThe 2SC5468 is a kind of transistor. It is silicon NPN epitaxial type (PCT process). The device is designed for video output stage in high resolution display. There are some features as follows: (1)high transition frequency: fT=400 MHz typ (VCE=10 V, IC=50 mA); (2)low collector output c...
2SC5468: DescriptionThe 2SC5468 is a kind of transistor. It is silicon NPN epitaxial type (PCT process). The device is designed for video output stage in high resolution display. There are some features as f...
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The 2SC5468 is a kind of transistor. It is silicon NPN epitaxial type (PCT process). The device is designed for video output stage in high resolution display. There are some features as follows: (1)high transition frequency: fT=400 MHz typ (VCE=10 V, IC=50 mA); (2)low collector output capacitance: Cob=3 pF typ (VCB=30 V); (3)high voltage: VCEO=120 V.
What comes next is about the absolute maximum ratings of 2SC5468 at Ta=25: (1)collector to base voltage, VCBO: 120 V; (2)collector to emitter voltage, VCEO: 120 V; (3)emitter to base voltage, VEBO: 5 V; (4)collector current, IC: 0.3 A when DC and 0.5 A when pulse; (5)base current, IB: 0.1 A; (6)collector dissipation, PC: 1.5 W at Ta=25 and 8 W at Tc=25; (7)junction temperature, Tj: 150; (8)storage temperature, Tstg: -55 to +150.
The following is about the electrical characteristics of 2SC5468 at Ta=25: (1)collector cutoff current, ICBO: 100A max at VCB=120 V, IE=0; (3)emittor cutoff current, IEBO: 1A max at VEB=5 V, IC=0; (4)DC current gain, hFE: 40 min and 240 max at VCE=10 V, IC=50 mA; 25 min at VCE=10 V, IC=200 mA; (7)collector-emitter voltage, VCE(sat): 1.0 V max at IC=50 mA, IB=5 mA; (8)base-emitter voltage, VBE(sat): 1.0 V max at IC=50 mA, IB=5 mA; (9)transition frequency, fT: 400 MHz typ at VCE=10 V, IC=50 mA; (10)collector output capacitance, Cob: 3.0 pF typ and 5.0 pF max at VCB=30 V, f=1 MHz, IE=0.