2SC5468

DescriptionThe 2SC5468 is a kind of transistor. It is silicon NPN epitaxial type (PCT process). The device is designed for video output stage in high resolution display. There are some features as follows: (1)high transition frequency: fT=400 MHz typ (VCE=10 V, IC=50 mA); (2)low collector output c...

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SeekIC No. : 004223583 Detail

2SC5468: DescriptionThe 2SC5468 is a kind of transistor. It is silicon NPN epitaxial type (PCT process). The device is designed for video output stage in high resolution display. There are some features as f...

floor Price/Ceiling Price

Part Number:
2SC5468
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Description

The 2SC5468 is a kind of transistor. It is silicon NPN epitaxial type (PCT process). The device is designed for video output stage in high resolution display. There are some features as follows: (1)high transition frequency: fT=400 MHz typ (VCE=10 V, IC=50 mA); (2)low collector output capacitance: Cob=3 pF typ (VCB=30 V); (3)high voltage: VCEO=120 V.

What comes next is about the absolute maximum ratings of 2SC5468 at Ta=25: (1)collector to base voltage, VCBO: 120 V; (2)collector to emitter voltage, VCEO: 120 V; (3)emitter to base voltage, VEBO: 5 V; (4)collector current, IC: 0.3 A when DC and 0.5 A when pulse; (5)base current, IB: 0.1 A; (6)collector dissipation, PC: 1.5 W at Ta=25 and 8 W at Tc=25; (7)junction temperature, Tj: 150; (8)storage temperature, Tstg: -55 to +150.

The following is about the electrical characteristics of 2SC5468 at Ta=25: (1)collector cutoff current, ICBO: 100A max at VCB=120 V, IE=0; (3)emittor cutoff current, IEBO: 1A max at VEB=5 V, IC=0; (4)DC current gain, hFE: 40 min and 240 max at VCE=10 V, IC=50 mA; 25 min at  VCE=10 V, IC=200 mA; (7)collector-emitter voltage, VCE(sat): 1.0 V max at IC=50 mA, IB=5 mA; (8)base-emitter voltage, VBE(sat): 1.0 V max at IC=50 mA, IB=5 mA; (9)transition frequency, fT: 400 MHz typ at VCE=10 V, IC=50 mA; (10)collector output capacitance, Cob: 3.0 pF typ and 5.0 pF max at VCB=30 V, f=1 MHz, IE=0.




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