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2SC5785

Features: • High DC current gain: hFE = 400 to 1000 (IC = 0.2 A)• Low collector-emitter saturation voltage: V CE (sat) = 0.12 V (max)• High-speed switching: tf = 25 ns (typ.)Specifications Parameter Symbol Limits Unit Collector-base voltage VCBO 20 V ...

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2SC5785: Features: • High DC current gain: hFE = 400 to 1000 (IC = 0.2 A)• Low collector-emitter saturation voltage: V CE (sat) = 0.12 V (max)• High-speed switching: tf = 25 ns (typ.)Specif...

2SC5785 Data Sheet

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Part Number:
2SC5785
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High DC current gain: hFE = 400 to 1000 (IC = 0.2 A)
• Low collector-emitter saturation voltage: V CE (sat) = 0.12 V (max)
• High-speed switching: tf = 25 ns (typ.)


Specifications

Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
7
V
Collector current DC
IC
2.0
A
Pulse
ICP
3.5
A
Base current
IB
200
mA
Power dissipation t= 10s
PC(Note 1)
2.0
W
DC
1.0
Junction temperature
Tj
150
Range of storage temperature
Tstg
−55 to +150
Note 1: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 m)


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