2SC5813

The 2SC5813 is a silicon NPN epitaxial planar type. It is designed for DC-DC converters. There are some features as follows: (1)low collector to emitter saturation voltage VCE(sat); (2)mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.

What comes next is about the absolute maximum ratings of 2SC5813 at Ta = 25: (1)collector to base voltage, VCBO: 80 V; (2)collector to emitter voltage, VCEO: 80 V; (3)emitter to base voltage, VEB: 5 V; (4)collector current, IC: 1.5 A; (5)peak collector current, ICP: 3 A; (6)collector power dissipation, PC: 600 mW; (7)junction temperature, Tj: 150; (8)storage temperature, Tstg: -55 to +150.

The following is about the electrical characteristics of 2SC5813 Ta = 25±3: (1)collector to base voltage VCBO at IC = 10 A, IE = 0: 80 V min; (2)collector to emitter voltage VCEO IC = 1 mA, IB = 0: 80 V min; (3)emitter to base voltage VEBO at IE = 10 A, IC = 0: 5 V min; (4)collector cutoff current ICBO VCB = 40 V, IE = 0: 0.1 A max; (5)forward current transfer ratio hFE VCE = 2 V, IC = 100 mA: 200 min; (6)collector to emitter saturation voltage  VCE(sat) IC = 1 A, IB = 20 mA: 350 mV typ and 500 mV max; (7)collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz: 15 pF typ and 25 pF max; (8)gain bandwidth product fT VCB = 10 V, IE = -50 mA, f = 200 MHz: 180 MHz typ.