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2SC5824

Features: ·High speed switching. (Tf : Typ. : 30ns at IC = 3A)·Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA)·Strong discharge power for inductive load and capacitance load.· Complements the 2SA2071.Application· NPN Silicon epitaxial planar transistorSpecifications ...

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SeekIC No. : 004223703 Detail

2SC5824: Features: ·High speed switching. (Tf : Typ. : 30ns at IC = 3A)·Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA)·Strong discharge power for inductive load and capacitance load....

2SC5824 Data Sheet

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Part Number:
2SC5824
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

 ·High speed switching. (Tf : Typ. : 30ns at IC = 3A)
 ·Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA)
 ·Strong discharge power for inductive load and capacitance load.
 · Complements the 2SA2071.


Application

· NPN Silicon epitaxial planar transistor


Specifications

Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
3
A
ICP
6
A*1
Power dissipation
PC
500
mW*2
PC
2.0
W*3
Junction temperature
Tj
150
°C
Range Storage temperature
Tstg
?55 to +150
°C
*1 Pw=100ms
*2 Each terminal mounted on a recommended land.
*3 Mounted on a 40x40x0.7(mm) ceramic substrate


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